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1 memory all data sheets are subject to change without notice (858) 503-3300- fax: (858) 503-3301- www.maxwell.com high-speed epi-cmos (16k x 9-bit) 7206F ?2001 maxwell technologies all rights reserved. parallel fifo 12.19.01 rev 3 1000572 i 7206F f eatures : ? 16k x 9-bit organization ?r ad -p ak ? radiation-hardened against natural space radia- tion ? a total dose hardness: - > 100 krad (si), depending upon space mission ? excellent single event effect - sel th : > 100 mev/mg/cm 2 - seu th : = 7 mev/mg/cm 2 - seu saturated cross section: 1.5e-5 cm 2 /bit ? asynchronous read/write operation ? high speed cmos epi technology ? retransmit capability ? propagation time (max access time): - 15 ns, 20 ns, 30 ns, 40 ns, 50 ns ? status flag: empty, half-full, full ? fully expandable in both word depth and width ? bi-directional applications ? low power ? battery back-up operation ? ttl compatible ? package: 28 pin r ad -p ak ? flat package d escription : maxwell technologies? 7206F high speed fifo microcircuit features a greater than 100 krad (si) total dose tolerance, depending upon space mission. it is organized such that the data is read in the same sequential order that it was written. full and empty flags are provi ded to prevent overflow and underflow. the expansion logic allows unlimited expansion capability in work size and dept h with no timing penalties. twin address pointers automatically generate internal read and write addresses, and automatically increment with the write and read pin. the 7206F 9-bits wide data are used in data communications applications where a parity bit for error checking is necessary. the retr ansmit capability allows the read pointer to be reset to its initial position without affecting the write pointer. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose toleranc e. this product is available with screening up to class s. logic diagram
memory 2 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 t able 1. 7206F p inout d escription p in s ymbol d escription 1w write enable 2 - 6 i8, i3-i0 inputs 7xi expansion in 8 ff full flag 9 - 13 q0 - q3, q8 outputs 14 gnd ground 15 r read enable 16 - 19 q4 - q7 outputs 20 xo /hf expansion out/half full flag 21 ef empty flag 22 rs reset 23 fl /rt first load/retransmit 24 - 27 i7 - i4 inputs 28 v cc power supply t able 2. 7206F a bsolute m aximum r atings p arameter s ymbol m in m ax u nit positive supply voltage v cc -0.3 7.0 v input or output voltage v in gnd -0.3 v cc +0.3 v storage temperature range t s -65 150 c operating temperature range t a -55 125 c t able 3. 7206F r ecommended o perating c onditions p arameter s ymbol m in m ax u nit positive supply voltage v cc 4.5 5.5 v high level input voltage v ih 2.2 -- v low level voltage v il -- 0.8 v thermal impedance jc -- 0.93 c/w operating temperature range t a -55 125 c
memory 3 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 t able 4. 7206F dc e lectrical c haracteristics (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nit operating supply current -15 -20 -30 -40 -50 i ccop -- -- -- -- -- 165 160 150 140 130 ma standby supply current (r = w = rs = flvrt = v ih )i ccsb -- 5 ma power down current (all input = v cc )i ccpd -- 400 a input leakage current (0.4v < v in < v cc )i li -- 1 a output leakage current (r = v ih , 0.4v < v out < v cc )i lo -- 1 a input low voltage 1 1. v ih max = v cc + 0.3v. v il min = -0.3v or -1.0v pulse width 50 ns. v il -- 0.8 v input high voltage 1 v ih 2.2 -- v output low voltage (v cc min, i ol = 8ma) v ol -- 0.4 v output high voltage (v cc min, i oh = -2ma) v oh 2.4 -- v input capacitance 2 2. guaranteed by design. c in -- 10 pf output capacitance 2 c out -- 10 pf t able 5. 7206F t iming c haracteristics 1 (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nits read cycle read cycle time -15 -20 -30 -40 -50 t rc 25 30 40 50 65 -- -- -- -- -- ns access time -15 -20 -30 -40 -50 t a -- -- -- -- -- 15 20 30 40 50 ns
memory 4 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 read recovery time -15 -20 -30 -40 -50 t rr 10 10 10 10 15 -- -- -- -- -- ns read pulse width 2 -15 -20 -30 -40 -50 t rpw 15 20 30 40 50 -- -- -- -- -- ns read low to data low-z 3 -15 -20 -30 -40 -50 t rlz 0 0 5 5 5 -- -- -- -- -- ns write high to data low-z 3,4 -15 -20 -30 -40 -50 t wlz 3 3 5 5 5 -- -- -- -- -- ns data valid from read high -15 -20 -30 -40 -50 t dv 5 5 5 5 5 -- -- -- -- -- ns read high to data bus high-z 3 -15 -20 -30 -40 -50 t rhz -- -- -- -- -- 15 15 20 25 30 ns t able 5. 7206F t iming c haracteristics 1 (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nits
memory 5 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 write cycle write cycle time -15 -20 -30 -40 -50 t wc 25 30 40 50 65 -- -- -- -- -- ns write pulse width 2 -15 -20 -30 -40 -50 t wpw 15 20 30 40 50 -- -- -- -- -- ns write recovery time -15 -20 -30 -40 -50 t wr 10 10 10 10 15 -- -- -- -- -- ns data set-up time -15 -20 -30 -40 -50 t ds 9 12 18 24 30 -- -- -- -- -- ns data hold time -15 -20 -30 -40 -50 t dh 0 0 0 0 5 -- -- -- -- -- ns reset cycle reset cycle time -15 -20 -30 -40 -50 t rsc 25 30 40 50 65 -- -- -- -- -- ns reset pulse width 2 -15 -20 -30 -40 -50 t rs 15 20 30 40 50 -- -- -- -- -- ns t able 5. 7206F t iming c haracteristics 1 (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nits
memory 6 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 reset set-up time 3 -15 -20 -30 -40 -50 t rss 20 30 30 50 60 -- -- -- -- -- ns reset recovery time -15 -20 -30 -40 -50 t rsr 10 10 10 10 15 -- -- -- -- -- ns retransmit cycle retransmit cycle time -15 -20 -30 -40 -50 t rtc 25 30 40 50 65 -- -- -- -- -- ns retransmit pulse width 2 -15 -20 -30 -40 -50 t rt 15 20 30 40 50 -- -- -- -- -- ns retransmit set-up time 3 -15 -20 -30 -40 -50 t rts 15 20 30 40 50 -- -- -- -- -- ns retransmit recovery time -15 -20 -30 -40 -50 t rtr 10 10 10 10 15 -- -- -- -- -- ns flags reset to ef low -15 -20 -30 -40 -50 t efl -- -- -- -- -- 25 30 30 50 65 ns t able 5. 7206F t iming c haracteristics 1 (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nits
memory 7 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 reset to hf /ff high -15 -20 -30 -40 -50 t hfh , t ffh -- -- -- -- -- 25 30 30 50 65 ns read low to ef low -15 -20 -30 -40 -50 t ref -- -- -- -- -- 15 20 30 40 50 ns read high to ff high -15 -20 -30 -40 -50 t rff -- -- -- -- -- 17 20 30 40 50 ns read pulse width after ef high -15 -20 -30 -40 -50 t rpe 15 20 30 40 50 -- -- -- -- -- ns write high to ef high -15 -20 -30 -40 -50 t wef -- -- -- -- -- 15 20 30 40 50 ns write low to ff low -15 -20 -30 -40 -50 t wff -- -- -- -- -- 20 20 30 40 50 ns write low to hf flag low -15 -20 -30 -40 -50 t whf -- -- -- -- -- 30 30 30 50 65 ns t able 5. 7206F t iming c haracteristics 1 (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nits
memory 8 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 read high to hf flag high -15 -20 -30 -40 -50 t rhf -- -- -- -- -- 30 30 30 50 65 ns write pulse width after ff high -15 -20 -30 -40 -50 t wpf 15 20 30 40 50 -- -- -- -- -- ns read/write low to xo low -15 -20 -30 -40 -50 t xol -- -- -- -- -- 15 20 30 40 50 ns read/write low to xo high -15 -20 -30 -40 -50 t xoh -- -- -- -- -- 15 20 30 40 50 ns xi pulse width -15 -20 -30 -40 -50 t xi 15 20 30 40 50 -- -- -- -- -- ns xi recovery time -15 -20 -30 -40 -50 t xir 10 10 10 10 10 -- -- -- -- -- ns xi set-up time -15 -20 -30 -40 -50 t xis 10 10 10 15 15 -- -- -- -- -- ns 1. v cc = +5v10%, t a = +25 c; use switching test circuit. ac tests are performed with input rise and fall times of 5 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3.0v and the output load circ uit, unless otherwise specified. t able 5. 7206F t iming c haracteristics 1 (v cc = 5v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nits
memory 9 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 f igure 1. r eset f igure 2. a synchronous w rite and r ead o peration f igure 3. f ull f lag t iming from l ast w rite to f irst r ead 2. pulse widths less than minimum value are not allowed. 3. values guaranteed by design, not currently tested. 4. only applies to read data flow-through mode.
memory 10 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 f igure 4. e mpty f lag t iming from l ast r ead to f irst w rite f igure 5. r etransmit f igure 6. e mpty f lag t iming f igure 7. f ull f lag t iming
memory 11 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 f igure 8. h alf -f ull f lag t iming f igure 9. e xpansion o ut f igure 10. e xpansion i n f igure 11. r ead d ata f low for t hrough m ode
memory 12 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 f igure 12. w rite d ata f low for t hrough m ode
memory 13 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 f28-07 note: all dimensions in inches 28 p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.129 0.142 0.155 b 0.015 0.017 0.022 c 0.004 0.005 0.009 d -- 0.720 0.740 e 0.400 0.410 0.420 e1 -- -- 0.440 e2 0.180 0.250 -- e3 0.005 0.080 -- e 0.050 bsc l 0.390 0.400 0.410 q 0.021 0.033 0.045 s1 0.005 0.067 -- n28
memory 14 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. high-speed epi-cmos (16k x 9-bit) parallel fifo 7206F 12.19.01 rev 3 1000572 important notice: these data sheets are created using the chip manufacturer s published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample test ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the us e of this information. maxwell technologies? products are not authorized for use as critical components in li fe support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.

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